BAL99,215

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BAL99,215 datasheet

• Маркировка
  BAL99,215
• Производитель
  NXP Semiconductors
• Описание
  NXP Semiconductors BAL99,215 Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz Configuration: Single Current - Average Rectified (io): 215mA (DC) Current - Reverse Leakage @ Vr: 1?µA @ 70V Diode Type: Standard Forward Continuous Current: 0.215 A Forward Voltage Drop: 1.25 V ID_COMPONENTS: 1942370 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Max Surge Current: 4 A Maximum Operating Temperature: + 150 C Maximum Power Dissipation: 250 mW Maximum Reverse Leakage Current: 1 uA Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Operating Temperature Range: + 150 C Package / Case: SOT-23-3, TO-236-3, Micro3?„?, SSD3, SST3 Peak Reverse Voltage: 70 V Product: Switching Diodes Recovery Time: 4 ns Reverse Recovery Time (trr): 4ns Series: - Speed: Fast Recovery = 200mA (Io) Voltage - Dc Reverse (vr) (max): 70V Voltage - Forward (vf) (max) @ If: 1.25V @ 150mA Product Category: Diodes - General Purpose, Power, Switching RoHS: yes Factory Pack Quantity: 3000 Part # Aliases: BAL99 T/R Other Names: 933986070215, BAL99 T/R
• Количество страниц
  9 шт.
• Форматы файла
  HTML, PDF

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